composite transistors 1 publication date: april 2004 sjj00286aed XN01602 silicon pnp epitaxial planar type (tr1) silicon npn epitaxial planar type (tr2) for general amplification features ? two elements incorporated into one package (emitter-coupled transistors) ? reduction of the mounting area and assembly cost by one half basic part number ? 2sa0719a (2sa719a) + 2sc1317 absolute maximum ratings t a = 25 c marking symbol: 2m internal connection tr2 tr1 345 2 1 note) the part number in the parenthesis shows conventional part number. parameter symbol rating unit tr1 collector-base voltage v cbo ? 60 v (emitter open) collector-emitter voltage v ceo ? 50 v (base open) emitter-base voltage v ebo ? 5v (collector open) collector current i c ? 0.5 a peak collector current i cp ? 1a tr2 collector-base voltage v cbo 60 v (emitter open) collector-emitter voltage v ceo 50 v (base open) emitter-base voltage v ebo 5v (collector open) collector current i c 0.5 a peak collector current i cp 1a overall total power dissipation p t 300 mw junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c unit: mm 1: base (tr1) 4: collector (tr2) 2: emitter 5: collector (tr1) 3: base (tr2) eiaj: sc-74a mini5-g1 package 2.90 1.9 0.1 0.16 +0.10 ?0.06 2.8 +0.2 ?0.3 1.1 +0.3 ?0.1 1.1 0 to 0.1 +0.2 ?0.1 1.50 (0.65) 0.4 0.2 +0.25 ?0.05 (0.95) (0.95) 0.30 +0.10 ?0.05 5 4 3 1 2 +0.20 ?0.05 5? 10?
XN01602 2 sjj00286aed ? tr2 electrical characteristics t a = 25 c 3 c ? tr1 note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. pulse measurement common characteristics chart p t t a parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = ? 10 a, i e = 0 ? 60 v collector-emitter voltage (base open) v ceo i c = ? 10 ma, i b = 0 ? 50 v emitter-base voltage (collector open) v ebo i e = ? 10 a, i c = 0 ? 5v collector-base cutoff current (emitter open) i cbo v cb = ? 20 v, i e = 0 ? 0.1 a forward current transfer ratio * h fe1 v ce = ? 10 v, i c = ? 150 ma 85 340 h fe2 v ce = ? 10 v, i c = ? 550 ma 40 collector-emitter saturation voltage * v ce(sat) i c = ? 300 ma, i b = ? 30 ma ? 0.35 ? 0.6 v base-emitter saturation voltage * v be(sat) i c = ? 300 ma, i b = ? 30 ma ? 1.1 ? 1.5 v transition frequency f t v cb = ? 10 v, i e = 50 ma, f = 200 mhz 200 mhz collector output capacitance c ob v cb = ? 10 v, i e = 0, f = 1 mhz 6 15 pf (common base, input open circuited) parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = 10 a, i e = 060v collector-emitter voltage (base open) v ceo i c = 10 ma, i b = 050v emitter-base voltage (collector open) v ebo i e = 10 a, i c = 05v collector-base cutoff current (emitter open) i cbo v cb = 20 v, i e = 0 0.1 a forward current transfer ratio * h fe1 v ce = 10 v, i c = 150 ma 85 340 h fe2 v ce = 10 v, i c = 500 ma 40 collector-emitter saturation voltage * v ce(sat) i c = 300 ma, i b = 30 ma 0.35 0.6 v transition frequency f t v cb = 10 v, i e = ? 50 ma, f = 200 mhz 200 mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz 6 15 pf (common base, input open circuited) note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. pulse measurement ambient temperature t a ( c) total power dissipation p t (mw) 0 160 140 60 20 80 120 40 100 0 350 300 100 250 200 50 150
XN01602 3 sjj00286aed characteristics charts of tr1 i c v ce i c i b v ce(sat) i c v be(sat) i c h fe i c c ob v cb characteristics charts of tr2 i c v ce i c i b v ce(sat) i c 0 0 1.0 0.8 0.6 0.4 0.2 ? 75 ? 100 ? 125 ? 150 ? 175 ? 200 ? 25 ? 50 base current i b (ma ) collector current i c ( ma ) v ce = ? 10 v t a = 25 c 0 ? 12 ? 10 ? 8 ? 2 ? 6 ? 4 0 ? 0.7 ? 0.6 ? 0.5 ? 0.4 ? 0.3 ? 0.2 ? 0.1 collector-emitter voltage v ce (v) collector current i c (a) ?4 ma i b = ? 10 ma t a = 25 c ?9 ma ?8 ma ?5 ma ?6 ma ?7 ma ?3 ma ?2 ma ?1 ma collector-emitter saturation voltage v ce(sat) (v) collector current i c (a) ? 1 ? 0. 1 ? 0.0 1 ? 0.00 1 ? 0.001 ? 0.01 ? 0.1 ? 1 25 c t a = 85 c ? 25 c i c /i b = 10 base-emitter saturation voltage v be(sat) (v) collector current i c (ma) ? 10 ? 1 ? 0. 1 ? 0.0 1 ? 0.1 ? 1 ? 10 ? 100 ? 1 000 85 c t a = ? 25 c 25 c i c /i b = 10 forward current transfer ratio h fe collector current i c (a) ? 0.001 ? 0.01 ? 0.1 ? 1 0 250 200 150 100 50 v ce = ? 10 v t a = 85 c ? 25 c 25 c 0 ? 20 ? 30 ? 10 ? 5 ? 15 ? 25 ? 35 ? 40 1 100 10 collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) f = 1 mhz t a = 25 c 012 10 8 26 4 0 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 collector-emitter voltage v ce (v) collector current i c (a) 4 ma i b = 10 ma t a = 25 c 9 ma 8 ma 5 ma 6 ma 7 ma 3 ma 2 ma 1 ma 0 0 1.0 1.2 0.8 0.6 0.4 0.2 0.08 0.1 0.12 0.14 0.16 0.18 0.04 0.02 0.06 base current i b (ma ) collector current i c ( a ) v ce = 10 v t a = 25 c collector-emitter saturation voltage v ce(sat) (v) collector current i c (ma) 1 0. 1 0.0 1 0.01 0.1 1 100 10 25 c t a = 85 c ? 25 c i c /i b = 10
XN01602 4 sjj00286aed v be(sat) i c h fe i c c ob v cb base-emitter saturation voltage v be(sat) (v) collector current i c (ma) 10 1 0. 1 0.1 1 10 100 85 c t a = ? 25 c 25 c i c /i b = 10 forward current transfer ratio h fe collector current i c (a) 0.001 0.01 0.1 1 0 200 120 140 160 180 80 60 100 40 20 v ce = 10 v t a = 85 c ? 25 c 25 c 02030 10 515253540 1 100 10 collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) f = 1 mhz t a = 25 c
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